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FMUSER Original New MGF2430A RF Power Transistor Power MOSFET Transistor

FMUSER Original New  MGF2430A  RF Power Transistor Power MOSFET Transistor DESCRIPTION The MGF2430A, GaAs FET with an N-channel schottkygate, is designed for L to Ku band amplifiers. FEATURES ●High output powerP1dB=30.5dBm(T.Y.P) @f=14.5GHz ●High linear gainGLP=6.5dB(TYP.) @f=14.5GHz ●High power added efficiencyP.A.E=27%(TYP.) @f=14.5GHz,P1dB ●Hermetically sealed metal packageAPPLICATION ●For L to Ku band power amplifiersQUALITY ●IGOUTLINE DRAWING RECOMMENDED BIAS CONDITIONS ●Vds=10V Ids=300mA  Rg=500 ●Absolute maximum ratings ●VGDO Gate to Source Voltage ●VGSO Gate to source voltage ●IDSS Satu

Detail

Price(USD) Qty(PCS) Shipping(USD) Total(USD) Shipping Method Payment
69 1 0 69 airmail

 



FMUSER Original New  MGF2430A  RF Power Transistor Power MOSFET Transistor





DESCRIPTION

The MGF2430A, GaAs FET with an N-channel schottkygate, is designed for L to Ku band amplifiers.


FEATURES

High output powerP1dB=30.5dBm(T.Y.P) @f=14.5GHz

High linear gainGLP=6.5dB(TYP.) @f=14.5GHz

High power added efficiencyP.A.E=27%(TYP.) @f=14.5GHz,P1dB

Hermetically sealed metal packageAPPLICATION

For L to Ku band power amplifiersQUALITY

IGOUTLINE DRAWING





RECOMMENDED BIAS CONDITIONS

Vds=10V Ids=300mA  Rg=500
Absolute maximum ratings
VGDO Gate to Source Voltage
VGSO Gate to source voltage
IDSS Saturated drain current
IGR Reverse gate current
IGF Forward gate current
PT*1 Total power dissipation
Tch Cannel temperature

Tstg Storage temperature*1:Tc=25°C(Ta=25°C) 

Package include
1x MGF2430A  RF Power Transistor


 

 

Price(USD) Qty(PCS) Shipping(USD) Total(USD) Shipping Method Payment
69 1 0 69 airmail

 

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