Price(USD)	Qty(PCS)	Shipping(USD)	Total(USD)	Shipping Method	Payment
215	1	0	215	DHL
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FMUSER Original New MRF6VP11KH RF Power Transistor Power MOSFET Transistor

FMUSER MRF6VP11KHR6 is designed primarily for pulsed wideband applications with frequencies up to 150 MHz. Device is unmatched and is suitable for use in industrial, medical and scientific applications.


Features

Typical Pulsed Performance at 130 MHz: VDD = 50 Volts, IDQ = 150 mA, Pout = 1000 Watts Peak (200 W Avg.), Pulse Width = 100 µsec, Duty Cycle = 20%
Power Gain: 26 dB
Drain Efficiency: 71%
Capable of Handling 10:1 VSWR, @ 50 Vdc, 130 MHz, 1000 Watts Peak Power
Characterized with Series Equivalent Large-Signal Impedance Parameters
CW Operation Capability with Adequate Cooling
Qualified Up to a Maximum of 50 VDD Operation
Integrated ESD Protection
Designed for Push-Pull Operation
Greater Negative Gate-Source Voltage Range for Improved Class C Operation
RoHS Compliant
In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel

Specification

Transistor Type: LDMOS
Technology:Si
Application Industry:ISM, Broadcast
Application:Scientific, Medical
CW/Pulse:CW
Frequency:1.8 to 150 MHz
Power:53.01 dBm
Power(W):199.99 W
P1dB:60.57dBm
Peak Output Power:1000 W
Pulsed Width:100 us
Duty_Cycle:0.2
Power Gain (Gp):24 to 26 dB
Input Return:Loss:-16 to -9 dB
VSWR:10.00:1
Polarity:N-Channel
Supply Voltage:50 V
Threshold Voltage:1 to 3 Vdc
Breakdown Voltage- Drain-Source:110 V
Voltage - Gate-Source:(Vgs):-6 to 10 Vdc
Drain Efficiency:0.71
Drain Current:150 mA
Impedance Zs:50 Ohms
Thermal Resistance:0.03 °C/W
Package:Type:Flange
Package:CASE375D--05 STYLE 1 NI--1230--4
RoHS:Yes
Operating Temperature:150 Degree C
Storage Temperature:-65 to 150 Degree C

Package includes

1x MRF6VP11KH RF Power Transistor

 

 

Price(USD)	Qty(PCS)	Shipping(USD)	Total(USD)	Shipping Method	Payment
215	1	0	215	DHL
				DHL