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FMUSER Original New MRF6V2150NB SMD RF Power Transistor Tube High Frequency Tube Power Amplification Module Power MOSFET Transistor

FMUSER original new MRF6V2150NB RF Power Transistor Power MOSFET Transistor designed primarily for wideband large - signal output and driver applicationswith frequencies up to 450 MHz. Devices are unmatched and are suitable foruse in industrial, medical and scientific applications

Product Details:

Part Number:MRF6V2150NB

Description:Lateral N-Channel Single-Ended Broadband RF Power MOSFET, 10-450 MHz, 150 W, 50 V

Features:

Typical CW Performance at 220 MHz: VDD = 50 Volts, IDQ = 450 mA,Pout = 150 Watts
Power Gain:25.5 dB
Drain Efficiency:69%
Capable of Handling 10:1 VSWR, @ 50 Vdc, 210 MHz, 150 WattsOutput Power
Integrated ESD Protection
Excellent Thermal Stability
Facilitates Manual Gain Control, ALC and Modulation Techniques
225°C Capable Plastic Package
RoHS Compliant

General Parameters:

Transistor Type:LDMOS

Technology:Si

Application Industry:ISM, Broadcast

Application:Scientific, Medical

CW/Pulse:CW

Frequency:10 to 450 MHz

Power:51.76 dBm

Power(W):149.97 W

CW Power:150 W

Power Gain (Gp):23.5 to 26.5 dB

Input Return Loss:-17 to -3 dB

VSWR:10.00:1

Polarity:N-Channel

Supply Voltage:50 V

Threshold Voltage:1 to 3 Vdc

Breakdown Voltage - Drain-Source:110 V

Voltage - Gate-Source (Vgs):-0.5 to 12 Vdc

Drain Efficiency:0.683

Drain Current:450 mA

Impedance Zs:50 Ohms

Thermal Resistance:0.24 °C/W

Package Type:Flange

Package:CASE 1484--04, STYLE 1 TO--272 WB--4 PLASTIC

RoHS:Yes

Operating Temperature:150 Degree C

Storage Temperature:-65 to 150 Degree 

Package includes：
1xMRF6V2150NB RF Power Transistor

 

 

Price(USD)	Qty(PCS)	Shipping(USD)	Total(USD)	Shipping Method	Payment
89	1	0	89	Airmail Shipping
				Airmail Shipping