FMUSER Original BLF888A 600W 50V UHF Power LDMOS RF Power Transistor-RF Transistor-FMUSER FM/TV Broadcast One-Stop Supplier

FMUSER Original BLF888A 600W 50V UHF Power LDMOS RF Power Transistor Description: A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Features ● Excellent ruggedness (VSWR ≥ 40 : 1 through all phases) ● Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W ● Suitable for CW UHF and ISM applications ● High power gain ● High efficiency ● Designed for broadband operation (470 MHz to 860 MHz) ● Internal input matching for high gain and optimum broadband operation ● Excellent reliability ● Easy

Detail

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FMUSER Original BLF888A 600W 50V UHF Power LDMOS RF Power Transistor

Description:

A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications.

Features

● Excellent ruggedness (VSWR ≥ 40 : 1 through all phases)
● Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W
● Suitable for CW UHF and ISM applications
● High power gain
● High efficiency
● Designed for broadband operation (470 MHz to 860 MHz)
● Internal input matching for high gain and optimum broadband operation
● Excellent reliability
● Easy power control
● Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC

Applications
● Communication transmitter applications in the UHF band

● Industrial applications in the UHF band

Parameters

● Symbol Parameter Conditions Min Typ / Name: Max Unit
● F range frequency range: 470 860 MHz
● PL(1dB) nominal output power: at 1 dB gain compression 600 IN
● Test signal: DVB-T (8k OFDM)
● Gp power gain VDS = 50 V; f = 858 MHz 20 dB
the D drain efficiency VDS = 50 V; f = 858 MHz; IDq = 1.3 A 31 %
● P L (AV) average output power VDS = 50 V; f = 858 MHz 120 IN
● MDshldr intermodulation distortion shoulder attenuation f = 858 MHz [0] -31 dBc
● BY peak-to-average ratio f = 858 MHz [1] 7.8 dB
● Type: RF Power Discrete Transistors
● Frequency Min: 0.47 GHz
● Frequency Max: 0.86 GHz
● Output Power: 600 W.

● Gain: 20 dB

● % Efficiency Type: 58