Add Favorite Set Homepage
Position:Home >> Products >> RF Transistor

Products Category

Products Tags

Fmuser Sites

FMUSER Original MRF173CQ 28V 50mA 150MHz 80W RF Power Transistor Power MOSFET Transistor N-Channel

FMUSER Original MRF173CQ 28V 50mA 150MHz 80W RF Power Transistor Power MOSFET Transistor N-Channel Features: ● Part Number MRF173CQ ● Description FET RF 65V 150MHZ 316-01 ● Detailed Description RF Mosfet N-Channel 28V 50mA 150MHz 13dB 80W 316-01, Style 2 ● Datasheets MRF173CQ ● Environmental Information RoHS Certificate ● HTML Datasheet MRF173CQ Description: ● Packaging : Tray ● Part Status: Active ● Transistor Type: N-Channel ● Frequency: 150MHz ● Gain: 13dB ● Voltage - Test: 28V ● Current Rating (Amps): 9A ● Noise Figure: 1.5dB ● Current - Test: 50mA ● Power - Output: 80W ● Volta

Detail

Price(USD) Qty(PCS) Shipping(USD) Total(USD) Shipping Method Payment
79 1 0 79 Airmail Shipping

 

FMUSER Original MRF173CQ 28V 50mA 150MHz 80W RF Power Transistor Power MOSFET Transistor N-Channel




Features:

● Part Number MRF173CQ

● Description FET RF 65V 150MHZ 316-01
● Detailed Description RF Mosfet N-Channel 28V 50mA 150MHz 13dB 80W 316-01, Style 2
● Datasheets MRF173CQ

● Environmental Information RoHS Certificate

● HTML Datasheet MRF173CQ


Description:
● Packaging : Tray
● Part Status: Active
● Transistor Type: N-Channel
● Frequency: 150MHz
● Gain: 13dB
● Voltage - Test: 28V
● Current Rating (Amps): 9A
● Noise Figure: 1.5dB
● Current - Test: 50mA
● Power - Output: 80W
● Voltage - Rated: 65V

 

Applications:

Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands, N–Channel enhancement modeMOSFET



Parameters:
N–Channel enhancement mode MOSFET
● Guaranteed performance at 150 MHz, 28 V:
Output power = 80 W
Gain = 11 dB (13 dB typ.)
Efficiency = 55% Min. (60% typ.)
● Low thermal resistance
● Ruggedness tested at rated output power
● Nitride passivated die for enhance
● ed reliability
● Low noise figure — 1.5 dB typ. at 2.0 A, 150 MHz

● Excellent thermal stability; suited for Class A operation
















 

 

Price(USD) Qty(PCS) Shipping(USD) Total(USD) Shipping Method Payment
79 1 0 79 Airmail Shipping

 

Leave a message 

Name *
Email *
Phone
Address
Code See the verification code? Click refresh!
Message
 

Message List

Comments Loading...
Home| About Us| Products| News| Download| Support| Feedback| Contact Us| Service

Contact: Zoey Zhang    Web: www.fmuser.net

Whatsapp/Wechat: +86 183 1924 4009

Skype: tomleequan     Email: [email protected] 

Facebook: FMUSERBROADCAST     Youtube: FMUSER ZOEY

Address in English: Room305, HuiLanGe, No.273 HuangPu Road West, TianHe District., GuangZhou, China, 510620    Address in Chinese: 广州市天河区黄埔大道西273号惠兰阁305(3E)