Price(USD)	Qty(PCS)	Shipping(USD)	Total(USD)	Shipping Method	Payment
245	1	0	245	DHL
				DHL

 

MRFX1K80H: 1800 W CW over 1.8-400 MHz, 65 V Wideband RF Power LDMOS Transistor

Description

The MRFX1K80H is the first device based on new 65 V LDMOS technology that focuses on ease of use. This high ruggedness transistor is designed for use in high VSWR industrial, scientific and medical applications, as well as radio and VHF TV broadcast, sub-GHz aerospace, and mobile radio applications. Its unmatched input and output design allow for wide frequency range use from 1.8 to 400 MHz.The MRFX1K80H is pin-compatible (same PCB) with its plastic version MRFX1K80N, with MRFE6VP61K25H and MRFE6VP61K25N (1250 W @ 50 V), and with MRF1K50H and MRF1K50N (1500 W @ 50 V).

Features
●Based on new 65 V LDMOS technology, designed for ease of use
●Characterized from 30 to 65 V for the extended power range
●Unmatched input and output
●High breakdown voltage for enhanced reliability and higher efficiency architectures
●High drain-source avalanche energy absorption capability
●High ruggedness. Handles 65:1 VSWR.
●RoHS compliant

●Lower thermal resistance option in the over-molded plastic package: MRFX1K80N

Applications

●Industrial, scientific, medical (ISM)
●Laser generation
●Plasma generation
●Particle accelerators
●MRI, RF ablation and skin treatment
●Industrial heating, welding and drying systems
●Radio and VHF TV broadcast
●Aerospace
●HF communications

●Radar

Package include

1xMRFX1K80H RF Power LDMOS Transistor

 

 

Price(USD)	Qty(PCS)	Shipping(USD)	Total(USD)	Shipping Method	Payment
245	1	0	245	DHL
				DHL