Price(USD)	Qty(PCS)	Shipping(USD)	Total(USD)	Shipping Method	Payment
108	1	35	143	DHL
				DHL

 

FMUSER Original New SD2931-11 RF Power Transistor High Power Gain 20V MOSFET Transistor

Description:
The SD2931-11 is a gold metallized N-channel MOS field-effect RF power transistor. Being electrically identical to the standard SD2931 MOSFET, it is intended for use in 50 V dc large signal applications up to 230 MHz. The SD2931-11 is mechanical compatible to the SD2931 but offers in addition a better thermal capability (25% lower thermal resistance), representing the best-in-class transistors for ISM applications, where reliability and ruggedness are critical factors.

Features:
* Gold metallization
* Excellent thermal stability
* Common source configuration
* POUT = 150 W min. with 14 dB gain @ 175MHz
* Thermally enhanced packaging for lower
* junction temperatures
* GFS and VGS sort marked on unit

Speciafication:

* Series: SD2931  
* Product Category: RF MOSFET Transistors 
* Transistor Polarity: N-Channel 
* Technology: Si 
* Id - Continuous Drain Current: 20 A 
* Vds - Drain-Source Breakdown Voltage: 125 V 
* Gain: 15 dB 
* Output Power: 150 W 
* Minimum Operating Temperature: - 65 C 
* Maximum Operating Temperature: + 200 C 
* Mounting Style: Screw Mount 
* Packaging: Bulk 
* Configuration: Single Dual Source  
* Height: 7.11 mm (Max)  
* Length: 24.89 mm (Max)  
* Operating Frequency: 230 MHz  
* Width: 12.83 mm (Max)  
* Channel Mode: Enhancement  
* Pd - Power Dissipation: 389 W  
* Vgs - Gate-Source Voltage: 20 V

 

 

Price(USD)	Qty(PCS)	Shipping(USD)	Total(USD)	Shipping Method	Payment
108	1	35	143	DHL
				DHL