The FMUSER Original MRF151 To-59  High-Frequency Tube

Overview

MRF series devices are high-performance 1MHz to 3.5GHz bipolar RF transistors. These Tech bipolar transistors are ideal for avionics, communications, radar, and industrial, scientific, and medical applications. MRF series devices are part of a broad range of RF power transistors that also includes pallet amplifiers, TMOS and DMOS transistors, and LDMOS transistors.

● Guaranteed Performance at 30 MHz, 50 V:
● Output Power — 150 W
● Gain — 18 dB (22 dB Typ)
● Efficiency — 40%
● Typical Performance at 175 MHz, 50 V:
● Output Power — 150 W
● Gain — 13 dB

● Low Thermal Resistance
● Ruggedness Tested at Rated Output Power
● Nitride Passivated Die for Enhanced Reliability

Description 

RF MOSFET Transistors 5-175MHz 150Watts 50Volt Gain 18dB. Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands.

Specification

● Product Category: RF MOSFET Transistors
● Transistor Polarity: N-Channel
● Id - Continuous Drain Current: 16 A
● Vds - Drain-Source Breakdown Voltage: 125 V
● Gain: 13 dB
● Output Power: 150 W
● Minimum Operating Temperature: - 65 C
● Maximum Operating Temperature: + 150 C
● Mounting Style: SMD/SMT
● Package / Case: 221-11-3
● Packaging: Tray
● Configuration: Single
● Operating Frequency: 175 MHz
● Pd - Power Dissipation: 300 W
● Product Type: RF MOSFET Transistors
● Factory Pack Quantity: 20
● Subcategory: MOSFETs
● Vgs - Gate-Source Voltage: 40 V
● Vgs th - Gate-Source Threshold Voltage: 3 V